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 Hyper TOPLED(R) RG Hyper-Bright LED
LS T776, LA T776, LO T776 LY T776
Besondere Merkmale
q q q q q
Gehausefarbe: wei als optischer Indikator einsetzbar zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung fur alle SMT-Bestuck- und Lottechniken geeignet gegurtet (12-mm-Filmgurt)
VPL06899
Features
q q q q q
color of package: white for use as optical indicator for backlighting, optical coupling into light pipes and lenses suitable for all SMT assembly and soldering methods available taped on reel (12 mm tape)
Semiconductor Group
1
11.96
LS T776, LA T776, LO T776, LY T776
Typ
Emissionsfarbe Color of Emission
Type
Farbe der Lichtaustrittsflache Color of the Light Emitting Area colorless clear
Lichtstarke
Lichtstrom
Bestellnummer
Luminous Intensity IF = 20 mA IV (mcd) 25 ... 40 ... 63 ... 100 ... 40 ... 40 ... 63 ... 100 ... 160 ... 63 ... 40 ... 63 ... 100 ... 160 ... 63 ... 40 ... 63 ... 100 ... 160 ... 63 ... 200 80 125 200 320 320 125 200 320 500 320 125 200 320 500 320 125 200 320 500
Luminous Flux IF = 20 mA V (mlm) 180 (typ.) 300 (typ.) 450 (typ.) 300 (typ.) 450 (typ.) 700 (typ.) 300 (typ.) 450 (typ.) 700 (typ.) 300 (typ.) 450 (typ.) 700 (typ.) -
Ordering Code
LS T776-NR LS T776-P LS T776-Q LS T776-R LS T776-PS LA T776-PS LA T776-Q LA T776-R LA T776-S LA T776-QT LO T776-PS LO T776-Q LO T776-R LO T776-S LO T776-QT LY T776-PS LY T776-Q LY T776-R LY T776-S LY T776-QT
super-red
Q62703-Q3270 Q62703-Q3271 Q62703-Q3272 Q62703-Q3273 Q62703-Q3274 Q62703-Q3914 Q62703-Q3915 Q62703-Q3916 Q62703-Q3917 Q62703-Q3918 Q62703-Q3275 Q62703-Q3276 Q62703-Q3277 Q62703-Q3278 Q62703-Q3279 Q62703-Q3280 Q62703-Q3281 Q62703-Q3282 Q62703-Q3283 Q62703-Q3284
amber
colorless clear
orange
colorless clear
yellow
colorless clear
Streuung der Lichtstarke in einer Verpackungseinheit I V max / I V min 2.0. Luminous intensity ratio in one packaging unit I V max / I V min 2.0.
Semiconductor Group
2
LS T776, LA T776, LO T776, LY T776
Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlastrom Forward current Stostrom Surge current t 10 s, D = 0.005 Sperrspanung1) Reverse voltage1) Verlustleistung Power dissipation Warmewiderstand Thermal resistance Sperrschicht / Umgebung Junction / air Montage auf PC-board*) (Padgroe 16 mm2) mounted on PC board*) (pad size 16 mm2)
1) 1)
Symbol Symbol
Werte Values LS, LO, LA LY - 55 ... + 100 - 55 ... + 100 + 100 30 1 20 0.2
Einheit Unit C C C mA A
Top Tstg Tj IF IFM
VR Ptot Rth JA
80
3 55 500
V mW K/W
Belastung in Sperrichtung sollte vermieden werden. Reverse biasing should be avoided.
*) PC-board: FR4
Semiconductor Group
3
LS T776, LA T776, LO T776, LY T776
Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Wellenlange des emittierten Lichtes Wavelength at peak emission IF = 20 mA Dominantwellenlange Dominant wavelength IF = 20 mA Spektrale Bandbreite bei 50% Irel max Spectral bandwidth at 50% Irel max IF = 20 mA Abstrahlwinkel bei 50% Iv (Vollwinkel) Viewing angle at 50% Iv Durchlaspannung Forward voltage IF = 20 mA Sperrstrom Reverse current VR = 3 V Symbol Symbol LS (typ.) peak (typ.) (typ.) dom (typ.) (typ.) (typ.) 2 (typ.) VF (max.) VF (typ.) IR (max.) IR TC TC (typ.) (typ.) - 1.95 - 1.78 - 1.67 - 2.51 mV/K 645 LA 622 Werte Values LO 610 LY 591 nm Einheit Unit
632
615
605
587
nm
16
16
16
15
nm
120 2.0 2.6 0.01 10
120 2.0 2.6 0.01 10
120 2.0 2.6 0.01 10
120 2.0 2.6 0.01 10
Grad deg. V V A A
Temperaturkoeffizient von dom (IF = 20 mA) Temperature coefficient of dom (IF = 20 mA) Temperaturkoeffizient von peak, IF = 20 mA Temperature coefficient of peak, IF = 20 mA
0.014 0.062 0.067 0.096 nm/K 0.14 0.13 0.13 0.13 nm/K
Temperaturkoeffizient von VF, IF = 20 mA (typ.) TCV Temperature coefficient of VF, IF = 20 mA (typ.)
Semiconductor Group
4
LS T776, LA T776, LO T776, LY T776
Relative spektrale Emission Irel = f (), TA = 25 C, IF = 10 mA Relative spectral emission V() = spektrale Augenempfindlichkeit Standard eye response curve
Abstrahlcharakteristik Irel = f () Radiation characteristic
Semiconductor Group
5
LS T776, LA T776, LO T776, LY T776
Durchlastrom IF = f (VF) Forward current TA = 25 C
Maximal zulassiger Durchlastrom Max. permissible forward current IF = f (TA)
Relative Lichtstarke IV/IV(20 mA) = f (IF) Relative luminous intensity TA = 25C
Relative Lichtstarke IV / IV(25C ) = f (TA) Relative luminous intensity IF = 20 mA
Semiconductor Group
6
LS T776, LA T776, LO T776, LY T776
Zulassige Impulsbelastbarkeit IF = f (tp) Permissible pulse handling capability LS, LA, LO Duty cycle D = parameter, TA = 25 C
Zulassige Impulsbelastbarkeit IF = f (tp) Permissible pulse handling capability LY Duty cycle D = parameter, TA = 25 C
Mazeichnung Package Outlines
(Mae in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified)
Kathodenkennung: Cathode mark: Semiconductor Group
abgeschragte Ecke bevelled edge 7
GPL06899


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